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MWI 100-12 E8
MKI 100-12 E8
Diodes
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
Conduction
I F25
I F80
T C = 25°C
T C = 80°C
200
130
A
A
Symbol
Conditions
Characteristic Values
min. typ. max.
V F
I RM
t rr
I F = 100 A; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
I F = 120 A; di F /dt = -750 A/μs; T VJ = 125°C
V R = 600 V; V GE = 0 V
2.3
1.7
58
190
2.6
V
V
A
ns
IGBT (typ. at V GE = 15 V; T J = 125°C)
V 0 = 0.95 V; R 0 = 14 m Ω
Free Wheeling Diode (typ. at T J = 125°C)
V 0 = 1.27V; R 0 = 4.3 m Ω
R thJC
(per diode)
0.3 K/W
Thermal Response
Module
Symbol
Conditions
Maximum Ratings
T VJ
T JM
T stg
V ISOL
M d
operating
I ISOL ≤ 1 mA; 50/60 Hz
Mounting torque (M5)
-40...+125
+150
-40...+125
2500
3-6
° C
° C
° C
V~
Nm
IGBT (typ.)
C th1 = 0.389 J/K; R th1 = 0.139 K/W
C th2 = 2.154 J/K; R th2 = 0.051 K/W
Free Wheeling Diode (typ.)
C th1 = 0.301 J/K; R th1 = 0.24 K/W
Symbol
Conditions
Characteristic Values
C th2 = 2.005 J/K; R th2 = 0.062 K/W
min. typ. max.
R pin-chip
1.8
m Ω
d S
d A
R thCH
Creepage distance on surface
Strike distance in air
with heatsink compound
10
10
0.01
mm
mm
K/W
Weight
300
g
Dimensions in mm (1 mm = 0.0394")
pins 5, 6, 7, 8 and 17 for MWI only
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
20070912a
2-4
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